Consider the double-gate Sol device as shown in Fig. 4.9. Instead of PMOS, an NMOS using an N+ poly gate, a thin-film of 1000A doped with a p-type doping density of 5 x 1016cm-3, front and back gate oxide layers of , and channel width and length of 511m. (a) Compute its threshold voltage. (b) If the back gate oxide becomes , what is the threshold voltage? (c) If the silicon thin-film thickness becomes what is the threshold voltage? (d) If the channel length becomes 0.2I1m, what is the threshold voltage? (e) If the channel width becomes , what is the threshold voltage? (f) If the thin-film doping density is switched to n-type 2 x 1016 cm-3, repeat (a)-(c) to compute the threshold voltage.
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